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| Datasheet File OCR Text: |
| NTE455 N-Channel Silicon Dual-Gate MOS Field Effect Transistor (MOSFET) Description: The NTE455 is an N-Channel silicon dual-gate MOSFET designed for use as an RF amplifier in UHF TV tuners. This device is especially recommended for use in half wave length resonator type tuners. Features: D Low Reverse Transfer Capacitance: Crss = 0.02pF Typ D High Power Gain: Gps = 18dB Typ D Low Noise Figure: NF = 3.8dB Typ Absolute Maximum Ratings: (TA = +25C unless otherwise specified) Drain-Source Voltage, VDSX . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V Gate1-Source Voltage, VG1S . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10V Gate2-Source Voltage, VG2S . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10V Drain Current, ID . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25mA Total Power Dissipation, PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mW Maximum Channel Temperature, Tch . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +125C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +125C Electrical Characteristics: (TA = +25C unless otherwise specified) Parameter Zero-Gate Voltage Drain Current Forward Transfer Admittance Input Capacitance Output Capacitance Reverse Transfer Capacitance Power Gain Noise Figure Gate-Source Cutoff Voltage Gate Reverse Current Drain-Source Breakdown Voltage Symbol IDSS |Yfs| Ciss Coss Crss Gps NF VG2S(off) IG1SS IG2SS BVDSX VDS = 0, VG1S = 10V, VG2S = 0 VDS = 0, VG2S = 10V, VG1S = 0 VG1S = VG2S = -2V, ID = 10A Test Conditions VDS = 10V, VG2S = 4V, VG1S = 0 VDS = 10V, VG2S = 4V, ID = 10mA, f = 1kHz VDS = 10V, VG2S = 4V, ID = 10mA, f = 1MHz VDS = 10V, VG2S = 4V, ID = 10mA, f = 1MHz VDS = 10V, VG2S = 4V, ID = 10mA, f = 1MHz VDS = 10V, VG2S = 4V, ID = 10mA, f = 900MHz VDS = 10V, VG2S = 4V, ID = 10mA, f = 900MHz Min 0.5 18 1.5 0.5 - 15 - - - - - 20 Typ - 22 2.0 1.1 18 3.8 - - - - 24 Max Unit 8.0 - 3.5 1.5 22 5.5 2.0 -0.7 20 20 - mA ms pF pF pF dB dB V V nA nA V 0.02 0.03 VG1S(off) VDS = 10V, VG2S = 4V, ID = 10A G2 G1 D .157 (4.0) Typ .098 (2.5) Max S .393 (10.0) Min .039 (1.0) .007 (0.20) Typ .027 (0.70) .157 (4.0) Dia Max |
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